发明名称 |
Semiconductor integrated circuit device |
摘要 |
A semiconductor integrated circuit device is provided, in which a node from which an output signal of a level shifter is sent can be initialized such that the potential thereof be set at a desired logic level at the time of power supply. The semiconductor integrated circuit device includes a level shifter 6 and two capacitors N10 and C0. The level shifter 6 receives an input signal and converts the received signal to a signal having a voltage amplitude greater than that of the received signal, then to provide the signal to a node D3. The capacitor N10 is connected to the node D3, and the capacitor C0 is connected in series with the capacitor N10. The capacitor N10 is formed of a MOS transistor having a gate connected to the node D3 and a source and a drain both connected to the capacitor C0.
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申请公布号 |
US2003173644(A1) |
申请公布日期 |
2003.09.18 |
申请号 |
US20020246654 |
申请日期 |
2002.09.19 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKASE YASUNOBU;NOTANI HIROMI |
分类号 |
H01L21/822;H01L27/02;H01L27/04;H01L27/08;H03K3/356;H03K17/06;H03K17/10;H03K17/22;H03K19/00;H03K19/003;H03K19/0185;(IPC1-7):H01L29/00;H01L31/062 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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