发明名称 |
Semiconductor device and method for forming the same |
摘要 |
An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.
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申请公布号 |
US2003173570(A1) |
申请公布日期 |
2003.09.18 |
申请号 |
US20030390014 |
申请日期 |
2003.03.18 |
申请人 |
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发明人 |
YAMAZAKI SHUNPEI;MASE AKIRA;HIROKI MASAAKI;TAKEMURA YASUHIKO;ZHANG HONGYONG;UOCHI HIDEKI;NEMOTO HIDEKI |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;H01L29/78;H01L29/786;H04N3/12;(IPC1-7):H01L27/15 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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