发明名称 |
MATCHLINE SENSING FOR CONTENT ADDRESSABLE MEMORIES |
摘要 |
A matchline sense circuit for detecting a current on a matchline of a CAM array is disclosed. Matchlines are decoupled from the sense circuit sense node in order to achieve higher sensing speed and improved sense margins. More specifically, a matchline sense circuit sense node receives a reference current, which is high enough to maintain the sens node at the high logic level. This reference current is generated from a dummy pull-down path identical to a memory cell pull-down path to ensure that the reference current tracks with changes to the memory cell current. Matchlines initially at ground potential undergo accelerated precharge up to a preset voltage potential level below VDD to overcome tail-out parasitic current and to minimize the voltage swing of the matchlines for conserving power. During sensing, the matchline current is compared to the reference current, and a latch circuit connected to the sense node provides a full CMOS output signal indicating the result of the comparison. Reference matchlines are used to generate timed control signals for enabling the latch circuits. |
申请公布号 |
WO03060918(A3) |
申请公布日期 |
2003.09.18 |
申请号 |
WO2002CA02026 |
申请日期 |
2002.12.27 |
申请人 |
MOSAID TECHNOLOGIES INCORPORATED |
发明人 |
VLASENKO, PETER;PERRY, DOUGLAS |
分类号 |
G11C15/00;G11C15/04 |
主分类号 |
G11C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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