| 摘要 |
A method for bonding a pair of silicon wafers (2,3) together to form a semiconductor Wafer (1) wherein )an interface surface (5) of one of the silicon wafers (3) is pretreated by an ion implantation or diffusion process prior to bonding of the silicon wafers (2,3). The )method includes Subjecting the pretreated interface surface (5) to an initial anneal step at approximately )700°C for 60 minutes for recrystallising the interface surface, and then Subjecting both interface surfaces (4,5) to two cleaning steps with respective first and second cleaning solutions, neither of which Contain sulphuric acid. The first cleaning solution comprises hydrogen peroxide, ammonia and water, while the second cleaning solution comprises hydrofluoric acid and water. The respective interface surfaces (4,5) are rinsed with water after each cleaning step, and the silicon wafers (2,3) are bonded by anneal bonding at a temperature of the order of 1, 150°C for approximately 60 minutes. |
