MICRO-STRUCTURED GAS SENSOR WITH CONTROL OF GAS SENSITIVE PROPERTIES BY APPLICATION OF AN ELECTRIC FIELD

摘要

The invention relates to an integrated gas sensor having a semi-conducting body on which a gas sensitive resistance layer (4) contacted by electrodes (5) is arranged. At least one field electrode (2, 6) is disposed underneath said resistance layer (4) and is separate from an insulating layer (3). The invention is characterised in that the insulating layer (3) has a thickness which is at least approximately less or equal to the 10-fold value of the Debye-length LD (1) corresponding to said insulating layer (3), wherein T represents temperature, ϵ represents a material dependent dielectricity number, ϵo represents dielelectricity constants, k represents Bolzmann's constants, N represents a charge carrier concentration and q represents an elementary charge.