| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to obtain wide active region by restraining bird's beak and to improve reliability by using low temperature processing of 900°C below. CONSTITUTION: A silicon-rich oxide layer(SiOx, where x<2)(22), a polysilicon layer(23) and an anti-oxidation layer(24) made of silicon nitride are sequentially formed on a semiconductor substrate(21). An isolation region is defined by selectively etching the anti-oxidation layer, the polysilicon layer and the silicon-rich oxide layer using a photoresist pattern(25) as a mask. An isolation layer is then formed by thermal oxidation of the exposed substrate.
|
