发明名称 |
Flexible hybrid memory element |
摘要 |
The invention includes a memory cell apparatus, and a method of forming the memory cell. The memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer formed adjacent to a flexible substrate. A flexible diode structure is formed adjacent to the flexible first conductor. A flexible switch is formed adjacent to the flexible diode structure. A flexible second conductive layer is formed adjacent to the flexible switch. The flexible switch is generally formed from an organic material. The flexible diode structure is generally formed from a disordered, inorganic material. The flexible switch can be formed to create a high resistance path when a threshold amount of current is passed through the flexible switch, or the flexible switch can be formed to create a low resistance path when a threshold amount of current is passed through the flexible switch. The method includes depositing a flexible first conductive layer on a flexible substrate. A flexible disordered inorganic material is deposited on the flexible first conductor forming a plurality of flexible diode structures. A flexible organic material is deposited on the flexible disordered inorganic material, forming a plurality of flexible switches adjacent to the plurality of flexible diode structures. A flexible second conductor is deposited on the flexible organic material.
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申请公布号 |
US2003176034(A1) |
申请公布日期 |
2003.09.18 |
申请号 |
US20020086606 |
申请日期 |
2002.03.01 |
申请人 |
JACKSON WARREN B.;TAUSSIG CARL PHILIP;PERLOV CRAIG |
发明人 |
JACKSON WARREN B.;TAUSSIG CARL PHILIP;PERLOV CRAIG |
分类号 |
G11C13/00;G11C17/16;H01L27/10;H01L29/861;(IPC1-7):H01L21/823 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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