| 摘要 |
When forming a metal oxide dielectric film having a perovskite crystal structure represented by ABO3 on a base metal, the metal oxide dielectric film is vapor-deposited by two-stage thermal CVD using an organometallic source gas and an oxidizing gas comprising the first step of feeding a Pb organometallic source gas alone or in combination with an oxidizing gas before depositing the metal oxide dielectric film; and then the second step of feeding an organometallic gas to be a source for the metal oxide dielectric film to deposit the metal oxide dielectric film. This process can grow a film (e.g., PZT) exhibiting a reduced leak current.
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