| 摘要 |
The invention relates to a process for the distributed shielding and decoupling of an electronic device having integrated components with three-dimensional interconnection, to such a device and to a production process. The device comprises, associated with each active component (2), at least one capacitor plane formed from a thin sheet (10) of a dielectric, said sheet being metallized (10, 11, 12) on its two plane faces. The components and the capacitor planes are stacked in alternation and joined together to form a block (1'), the lateral faces (21 to 24) of which carry conductors (13, 14) ensuring 3D interconnection. The metallizations (11, 12) are delimited in order to be flush with the edges of the block only via tabs (110, 120). One of the metallizations (11) connected to ground serves as shielding. The invention applies especially to the production of very compact memory blocks. |
