| 摘要 |
<p>A conventional pin photodetector structure consisting of an n-type semiconductor substrate(101) of thickness (121). On top of the substrate, a n-type semiconductor buffer layer (102) of thickness (122), followed by an intrinsic semiconductor layer (103) of thickness (123), and p-type semiconductor layer (105) of thickness (125), are all grown epitaxially on the substrate (101).</p> |
