| 摘要 |
<p>The present invention relates to a photonic device having a first set of layers (22) including at least a first waveguide layer (3) arranged in a waveguide mesa (61). A cladding layer (7) is arranged on top of the waveguide mesa (61) and surrounding semiconductor material (1). A contact layer (8) is arranged on top of the cladding layer (7), and a metal contact (9, 80) is arranged on top of the contact layer (8). The cladding (7) and contact (8) layer are shaped in an etching process to have a mesa structure at least above the waveguide mesa (61). An insulating material (25, 82) is also applied around the mesa structure. Optionally a second photonic device having a second set of layers (31) including at least a second waveguide layer (33), may be coupled to the first photonic device in a light transmission direction thereof. The invention also relates to a method for manufacturing the photonic device.</p> |
