| 摘要 |
<p>Masks each having a plotted pattern capable of being superimposed with a high accuracy, a semiconductor device manufacturing method improving the yield of a semiconductor device, and semiconductor device capable of miniaturizing a pattern. A mask includes a plurality of mask areas where different mask patterns are formed to be transferred onto the same device. All the mask patterns are plotted by the same electron beam exposure means. A mask pattern of each mask is divided into a plurality of deflection areas when plotted. The deflection area is a range where a part of the mask pattern can be plotted on the mask by fixing he electron beam exposure means and deflecting the electron beam. A deflection area is divided so that a mask pattern in an arbitrary deflection area of each mask is transferred into the same area on the device as the mask pattern in the deflection area of another mask.</p> |
