| 摘要 |
PURPOSE: A flash memory device is provided to improve operation properties by changing constant voltage after rising power voltage. CONSTITUTION: A flash memory device includes a switching circuit(21), a booster circuit(22) for rising the potential of power voltage(Vcc) and a constant voltage generating circuit(23) for transforming the output voltage of the booster circuit to a constant voltage. The switching circuit(21) supplies the output voltage of the constant voltage generating circuit to a bit line according to output signal of an Y-decoder.
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