X-ray exposure method and semiconductor device manufactured using this X-ray exposure method as well as X-ray mask, X-ray exposure unit and resist material

摘要

The pattern dimensions of an X-ray absorber are made approximately 1.5 times (approximately 75 nm) a pattern half pitch (L/2=50 nm). Thereby, a high quality optical image can be obtained since the contrast in regard to X-rays of wavelengths shorter than approximately 8 � to 9 � is improved vis-�-vis the contrast of a 50 nm line and space periodic mask pattern. As a result, it becomes possible to provide an X-ray exposure method which makes possible to obtain a high resolution, a semiconductor device manufactured by means of this X-ray exposure method as well as an X-ray mask, X-ray exposure unit and resist material.