发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1x1019/cm3 to 1x1021/cm3 and belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5x1019/cm3 to 3x1021/cm3 and belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves. |
申请公布号 |
US2003173566(A1) |
申请公布日期 |
2003.09.18 |
申请号 |
US20030365911 |
申请日期 |
2003.02.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NAKAZAWA MISAKO;MAKITA NAOKI |
分类号 |
G02F1/1368;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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