Semiconducting component has voltage limiting element in form of passive, non-linear resistance element with relatively weakly doped channel region between source and drain regions

摘要

The device has a substrate region (22) of doped semiconducting material of a first conductivity type in a substrate with an integrated voltage limiting element (12) in the substrate region in the form of a passive, non-linear resistance element containing a conductive doped drain region (20) with an input contact, a source region (24) with an output contact and a relatively weakly doped channel region (32) between the source and drain regions.