发明名称 |
Photomask, method for manufacturing the same, and method for measuring optical characteristics of wafer exposure system using the photomask during operation |
摘要 |
Provided are a photomask, a method for manufacturing the photomask and a method for measuring optical characteristics of a wafer exposure system, the measuring method using the photomask during manufacture. The photomask includes a substrate and a measuring pattern including a light opaque region pattern formed on the substrate and a plurality of light transmitting region patterns that are formed in regions divided by the light opaque region pattern and provoke phase shifts to provide phase differences to light transmitted through light transmitting regions. Precise measurements of the degree of a focus and lens aberrations of an exposure system using the photomask are obtained.
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申请公布号 |
US2003175600(A1) |
申请公布日期 |
2003.09.18 |
申请号 |
US20030383192 |
申请日期 |
2003.03.06 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
JEONG TAE-MOON;KIM SEONG-HYUCK;CHOI SEONG-WOON |
分类号 |
H01L21/027;G03F1/00;G03F7/20;G03F7/207;(IPC1-7):G03F1/08;G03F9/00;G03B13/24;G03B13/26;G03B27/52;G01N23/00;G21K7/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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