Power semiconducting component for blocking voltages above 2000 Volts has low doping level central zone for absorbing electric field of width related to maximum anticipated voltage peak

摘要

The silicon-based power semiconducting component has a low doping level central zone of a certain width for absorbing the electric field, whereby the width is between a threshold width and 1.2 times the threshold width, which is related to the maximum anticipated voltage peak by a given relationship.