发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE COMPRISING UNEVEN SUBSTRATE |
摘要 |
At least one depression (20) and/or projection (21) for scattering or diffracting light generated in a light emitting region (12) is formed in the surface of a substrate (10). The recess and/or projection is so shaped as to generate no crystal defects in semiconductor layers (11, 13). |
申请公布号 |
KR20070089750(A) |
申请公布日期 |
2007.08.31 |
申请号 |
KR20077017029 |
申请日期 |
2002.07.24 |
申请人 |
NICHIA CORPORATION |
发明人 |
NIKI ISAMU;YAMADA MOTOKAZU;SANO MASAHIKO;SHIOJI SHUJI |
分类号 |
H01L33/38;H01L33/00;H01L33/22;H01L33/24;H01L33/32;H01L33/42 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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