Seed crystal for production of silicon single crystal and method for production of silicon single crystal

摘要

In the manufacture of a silicon single crystal by the Czochralski method, there is provided a seed crystal for use in the production of the silicon single crystal. This seed crystal is capable of preventing creation of a dislocation occurring during the immersion of the seed crystal in the molten silicon and withstanding the load of a silicon single crystal of great weight as well. There is also a method for the production of the seed crystal and a method for the production of a silicon single crystal which enables the ratio of elimination of dislocation to be increased. A seed crystal for the production of a silicon single crystal for use in the manufacture of a silicon single crystal by the Czochralski method, has the boron concentration in the silicon single crystal as the matrix from which the silicon seed crystal is excised is not less than 4x1018 atoms/cm3 and not more than 4x1019 atoms/cm3 and the silicon seed crystal is excised from the silicon single crystal as the matrix, ground, and lapped, and subsequently subjected to surface etching.