发明名称 |
High permeability thin films and patterned thin films to reduce noise in high speed interconnections |
摘要 |
This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated circuit. The method includes forming a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A pair of high permeability metal lines are formed on the first layer of insulating material. The pair of high permeability metal lines include permalloy and/or Ni45Fe55 films. A transmission line is formed on the first layer of insulating material and between and parallel with the pair of high permeability metal lines. A second layer of insulating material is formed on the transmission line and the pair of high permeability metal lines. And, the method includes forming a second layer of electrically conductive material on the second layer of insulating material.
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申请公布号 |
US2003176052(A1) |
申请公布日期 |
2003.09.18 |
申请号 |
US20030371145 |
申请日期 |
2003.02.20 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FORBES LEONARD;AHN KIE Y.;AKRAM SALMAN |
分类号 |
H01L21/44;H01L21/8238;H01L21/8242;H01L23/522;H01L23/532;H01L23/58;H01L27/148;H01L29/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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