发明名称 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR CHIP, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>A semiconductor substrate the functional element of which is prevented from being broken down by cutting during the process of manufacturing a semiconductor device. A semiconductor substrate (1) is characterized in that cutting start regions (9a, 9b) are formed inside a melting process region by multiphoton absorption by irradiation with a laser beam at the focal point of the laser beam. Thus, a functional element is formed on the surface of the semiconductor substrate as conventional. Since the cutting start regions (9a, 9b) are formed inside the semiconductor substrate (1), the semiconductor substrate (1) is cut by high-precision breaking with a relatively small force along the cutting start regions (9a, 9b).</p>
申请公布号 WO03076118(A1) 申请公布日期 2003.09.18
申请号 WO2003JP02866 申请日期 2003.03.11
申请人 HAMAMATSU PHOTONICS K.K.;FUKUYO, FUMITSUGU;FUKUMITSU, KENSHI;UCHIYAMA, NAOKI 发明人 FUKUYO, FUMITSUGU;FUKUMITSU, KENSHI;UCHIYAMA, NAOKI
分类号 B23K26/40;B28D5/00;(IPC1-7):B23K26/38;H01L21/301 主分类号 B23K26/40
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