HIGH-FREQUENCY POWER SUPPLY STRUCTURE AND PLASMA CVD DEVICE USING THE SAME

摘要

A high-frequency power supply structure for reducing the reflection of the high-frequency power at the RF cable connection portion to an electrode and increasing the high-frequency power incident to the electrode. A plasma CVD device using the structure is also disclosed. In the high-frequency power supply structure to a planar electrode from an RF cable in a device for applying high-frequency power to the electrode so as to generate plasma, at a connection portion provided at the electrode end, the RF cable is located at the extension of the plane formed by the electrode so as to be in contact with the electrode. Since the RF cable is connected to the electrode substantially on the same plane formed by the electrode, symmetric voltage is applied to the connection portion and after with respect to a plane formed by the electrode and distribution of electric force line becomes symmetric. The change of impedance at the connection portion is reduced, reflection of the high-frequency power at the connection portion is reduced, and high-frequency power incident to the electrode is increased. Moreover, efficiency of film formation and surface processing is improved.