发明名称 Thin film-device manufacturing method, and semiconductor device
摘要 The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first substrate (101) through a first adhesive layer (105), then, completely or partly removing the first substrate (101) in accordance with a process including at least one process of a chemical process and a mechanical polishing process, bonding a third substrate (109) to the exposed protective layer (102) or the protective layer (102) covered with the partly removed first substrate (101) through a second adhesive layer (108) and separating or removing the second substrate (106). Thus, the thin film device suitable for a light and thin display panel is manufactured without deteriorating a ruggedness.
申请公布号 US2003174275(A1) 申请公布日期 2003.09.18
申请号 US20020311192 申请日期 2002.12.13
申请人 发明人 ASANO AKIHIKO;KINOSHITA TOMOATSU
分类号 H01L21/336;H01L27/12;H01L29/786;(IPC1-7):G02F1/13 主分类号 H01L21/336
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