发明名称 Heat treatment apparatus and method for processing substrates
摘要 In a method for processing a substrate, a plurality of substrates maintained in a boat are loaded into a cylindrical inner tube disposed in a cylindrical outer tube. A processing gas is supplied into a process room, and thereafter the substrates are batch-processed with the processing gas evacuated through an exhaust path formed between the inner tube and the outer tube, wherein nitrogen gas is supplied to a surface region of the ceiling of the outer tube during a film forming process of the substrates, thereby the processing gas ascended through the process room is prevented from coming into contact with the ceiling of the outer tube by the nitrogen gas covering thereat. Accordingly, products and/or by-products of the film forming gas is prevented from being adhered thereto, thereby formation of contaminants due to the deterioration of the deposition of the products and the by-products thereof can be eliminated/reduced.
申请公布号 US2003175426(A1) 申请公布日期 2003.09.18
申请号 US20030383636 申请日期 2003.03.10
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 SHIRATORI WAKAKO
分类号 H01L21/205;C23C16/44;C23C16/455;C23C16/458;(IPC1-7):C23C16/00;C23C16/40 主分类号 H01L21/205
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