| 摘要 |
<p>A method for grinding the rear surface of a semiconductor wafer having a plurality of circuits formed on the surface and a substantially hemispherical cross-section at the outer circumferential edge by a grinding means so that the semiconductor wafer has a specified thickness. Prior to grinding the rear surface of the semiconductor wafer, the outer circumferential edge of the semiconductor wafer is subjected to preprocessing for forming it to a plane making an angle of θ with respect to the rear surface, where 80˚≤θ≤100˚ more preferably 85˚≤θ≤95˚.</p> |
