| 发明名称 |
SCHOTTKY POWER DIODE COMPRISING A SICOI SUBSTRATE AND THE METHOD OF PRODUCING ONE SUCH DIODE |
| 摘要 |
The invention relates to a power junction device comprising: a SiCOI-type substrate with a silicon carbide layer (16) which is insulated from a solid support (12) by means of an insulating buried layer (14), and at least one Schottky contact between a first metallic layer (40) and the silicon carbide surface layer (16), said first metallic layer (30) forming an anode. |
| 申请公布号 |
WO03077321(A2) |
申请公布日期 |
2003.09.18 |
| 申请号 |
WO2003FR00787 |
申请日期 |
2003.03.12 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;SOITEC;TEMPLIER, FRANCOIS;BILLON, THIERRY;DAVAL, NICOLAS |
发明人 |
TEMPLIER, FRANCOIS;BILLON, THIERRY;DAVAL, NICOLAS |
| 分类号 |
H01L21/04;H01L21/338;H01L29/24;H01L29/47;H01L29/786;H01L29/812;H01L29/872 |
主分类号 |
H01L21/04 |
| 代理机构 |
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