| 摘要 |
PURPOSE: A method for forming an IMD(InterMetal Dielectric) of a semiconductor device is provided to improve reliability and yield by using DLM(Double Layer Metallization) processing. CONSTITUTION: The first oxide layer(30) is formed on a substrate(10) with a lower metal line(20) by PECVD(Plasma Enhanced Chemical Vapor Deposition). A BPSG layer(40) and an SOG layer(50) as DLM are sequentially formed on the first oxide layer. The SOG layer and the BPSG layer are etch-back to remove entirely the SOG layer on the lower metal line. Then, the second oxide layer(60) is formed on the resultant structure by PECVD.
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