| 摘要 |
PURPOSE: An interlayer planarization method of a semiconductor device is provided to effectively prevent attacks of dopants by using HDP-CVD(High Density Plasma Chemical Deposition) layer as an interlayer dielectric. CONSTITUTION: An HDP-CVD oxide layer(11) is formed on a semiconductor substrate(10) with metal interconnections(20). A BPSG layer(12) as a planarization layer is then formed on the HDP-CVD oxide layer. The BPSG layer(12) is then planarized by CMP(Chemical Mechanical Polishing).
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