| 摘要 |
<p>A laser diode that has a plurality of semiconductor epitaxial layers grown on a substrate (30). The diode includes a light generating layer (34) located between two layers of n-type material (32 and 34). A thin layer of p-type material (36 and 38) is interposed between the active layer (34) and an n-type layer (40 and 42). The Diode includes a layer of n-doped material (32) located adjacent to a substrate (30). The laser diode further includes a contact (44). The contact (44) is biased so as to induce a recombination of holes and electrons in the active region (34) and generate light.</p> |
