| 摘要 |
<p>A method of cutting a processed object capable of accurately cutting a processed object, comprising the steps of radiating laser beam (L) to the inside of the processed object (1) such as a silicon wafer with a condensing point (P) focused thereto to form reformed areas (7) in the processed object (1) by absorbing multiple photons, forming cut start areas (8) eccentric from the centerline (CL) of the processed object (1) in thickness direction to the surface (3) side of the processed object (1) along a predicted cut line, and pressing the processed object (1) from the rear (21) side thereof, whereby the processed object (1) can be accurately cut along the predicted cut line by producing cracking starting at the cut start areas (8).</p> |
