PLASMA PROCESSING DEVICE AND PLASMA GENERATING METHOD
摘要
A plasma processing device, wherein the lengths L of slots (26) are monotonously increased from the center part (A) of an antenna surface (28) in an outer radial direction and maximized at a first intermediate part (C) and the maximum lengths are maintained from the first intermediate part (C) to a peripheral edge part (B) to increase a radiation power by a slot antenna as compared with a case when the lengths L are monotonously increased from the center part of the antenna surface (28) to the peripheral edge part thereof, whereby a reflected power from the slot antenna is reduced since the power remaining in the slot antenna is reduced without being radiated from the slot antenna.
申请公布号
WO03077302(A1)
申请公布日期
2003.09.18
申请号
WO2003JP02925
申请日期
2003.03.12
申请人
TOKYO ELECTRON LIMITED;YASAKA, YASUYOSHI;TAKAHASHI, MASAHARU;ANDO, MAKOTO;ISHII, NOBUO