METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to improve the profile of the contact hole by using an interlayer dielectric with the same etching selectivity to an insulating layer. CONSTITUTION: The first BPSG layer(13), the first USG layer(14) and the second BPSG layer(15) are sequentially formed on a silicon substrate(11) with a junction region(12). The second USG layer(16) and the third BPSG layer(17) are sequentially formed on the second BPSG layer. A contact hole(20) is formed to expose the junction region by sequentially etching the third BPSG layer, the second USG layer, the second BPSG layer, the first USG layer and the first BPSG layer. Then, a native oxide is removed by cleaning the resultant structure.