| 摘要 |
PURPOSE: A method for forming a barrier metal film of a semiconductor device is provided to simplify process steps and to prevent junction breakage by implanting ions after titanium deposition. CONSTITUTION: An insulating layer(13) is formed on a semiconductor substrate(11) with a junction region(12). A contact hole is formed to expose the junction region by etching the insulating layer. A titanium film(15) is formed on the resultant structure. Then, phosphorous ions are implanted into the titanium film(15) so as to prevent diffusion of titanium.
|
