QUANTUM DEVICE

摘要

An electron source element (10a) is formed on one front surface side of an insulating substrate (1) in an electron source (10). The electron source element (10a) comprises a downside electrode (2), a composite nano-crystal layer (6) and a surface electrode (7). The composite nano-crystal layer (6) includes a plurality of grains (51) that are polycrystalline silicons, thin silicon oxide films (52) each formed on the surface of each grain (51), a large number of nano-crystal silicons (63) intervened between adjacent grains (51), and a large number of silicon oxide films (64) each formed on the surface of each nano-crystal silicon (63) and being an insulation film having a film thickness smaller than the crystal grain size of the nano-crystal silicon (63). The surface electrode (7) comprises a carbon thin film (7a) laminated in contact with the composite nano-crystal layer (6), and a metal thin film (7b) laid on the carbon thin film (7a).