发明名称 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 <p>A resist composition is provided that yields fine resolution, and improved levels of line edge roughness and depth of focus. This composition includes a resin component (A) that undergoes a change in alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a resin with a weight average molecular weight of no more than 8,000 containing structural units (a) derived from a (meth)acrylate ester, and the component (B) includes at least one sulfonium compound represented by a general formula (b-1) or a general formula (b-2) shown below.</p>
申请公布号 KR100801050(B1) 申请公布日期 2008.02.04
申请号 KR20067007537 申请日期 2006.04.19
申请人 发明人
分类号 G03F7/039;G03F7/004;H01L21/02;H01L21/027 主分类号 G03F7/039
代理机构 代理人
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