Semiconductor device and manufacturing method for the same

摘要

In a method of manufacturing a semiconductor device, a first wiring line (22a, 34b) composed of a copper containing metal film is formed on or above a semiconductor substrate (100). A first interlayer insulating film (18, 16)) is formed on a whole surface of the semiconductor substrate to cover the first wiring line. The first interlayer insulating film is selectively removed to form a connection hole reaching the first wiring line. A barrier metal film (30) is formed to cover an inner surface of the connection hole and then a copper containing metal film (32) is formed to fill the connection hole. The copper containing metal film formed outside the connection hole is removed. A second interlayer insulating film (20, 14b) is formed on a whole surface of the semiconductor substrate to cover the copper containing metal film formed in the connection hole. The second interlayer insulating film is selectively removed to form a wiring line groove such that the copper containing metal film formed in the connection hole is exposed at a bottom. A barrier metal film is formed to cover an inside of the wiring line groove and then a copper containing metal film is formed to fill the wiring line groove. Then, the copper containing metal film outside the wiring line groove is removed to form a second wiring line (34b and 22b).