| 摘要 |
A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions ( 112, 114, 116, 118 , and 120 ) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semiconductor region electrically floats. When the two terminals (A and K) of the ESD protection structure are subjected to an ESD voltage, the structure goes into operation by triggering one of its two inherent thyristors ( 170 and 180 ) into a snap-back mode that provides a low impedance path through the structure for discharging the ESD current.
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