发明名称 |
PROCESS FOR DETERMINING THE CRYSTAL ORIENTATION IN A WAFER |
摘要 |
<p>A method for determining the crystal orientation of a wafer using anisotropic etching in which an etching mask having mask openings such as circle scale marks arranged one beside the other is applied in relation to a preexisting marking of the wafer. Mask openings are configured in a double-T shape and are arranged one beside the other so that their first, transversely extending segments and the second transversely extending segments are situated at a predetermined distance apart and the areas connecting the segments are situated equidistant. The crystal orientation is determined with the distance of the two particular adjacent mask openings, the intervening space of which is least undercut, from the preexisting marking.</p> |
申请公布号 |
EP0883899(B1) |
申请公布日期 |
2003.09.17 |
申请号 |
EP19970914163 |
申请日期 |
1997.02.28 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
WINKLER GEB. JANTKE, GABRIELE;STECKENBORN, ARNO;WINKLER, THORALF |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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