发明名称 Base material for forming diamond film
摘要 There is disclosed a base material for forming a diamond film by vapor phase synthesis, wherein diamond particles having a particle (13) diameter of 2 nm to 100 nm exist at a density of 1 x 10<8> to 1 x 10<13> number/cm<2> on a surface of the base material (11), and spaces among the diamond particles are filled with diamond particles having a particle diameter of less than 2 nm. There can be provided a base material for forming a diamond film (14) by vapor phase synthesis which can provide a high generation density of diamond nuclei and a continuous diamond film even with an extremely small film thickness such as 10 mu m or less. <IMAGE>
申请公布号 EP1344841(A1) 申请公布日期 2003.09.17
申请号 EP20030251429 申请日期 2003.03.10
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NOGUCHI, HITOSHI
分类号 C30B29/04;C23C16/02;C23C16/27 主分类号 C30B29/04
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