发明名称 Level conversion circuit as well as semiconductor device and display unit comprising the same
摘要 A control circuit of a control part sets the gate potential of a p-channel MOSFET of a driver part to a level lowering from a supply potential by at least the threshold voltage of the p-channel MOSFET while setting the gate potential of an n-channel MOSFET to a level rising from a low level of an input signal by at least the threshold voltage of the n-channel MOSFET in response to the input signal, thereby strongly turning on one of the p-channel MOSFET and the n-channel MOSFET and weakly turning on the other MOSFET. <IMAGE>
申请公布号 EP1130779(A3) 申请公布日期 2003.09.17
申请号 EP20010301756 申请日期 2001.02.27
申请人 SANYO ELECTRIC CO., LTD. 发明人 MATSUMOTO, SHOICHIRO
分类号 G09G3/20;G09G3/30;G09G3/32;G09G3/36;H03K19/00;H03K19/017;H03K19/0185 主分类号 G09G3/20
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