| 摘要 |
A method for cleaning a surface of a pad TEOS layer by laser annealing is provided to prevent generation of scratch by effectively removing particles generated on the surface of the pad TEOS using the laser annealing. A pad oxide layer(12), a pad nitride(14), and a pad TEOS layer(16) are sequentially formed on a semiconductor substrate(10). After the pad TEOS layer is deposited, a level of a particle is examined. In case the level of the particle is matched to a predetermined level, a subsequent STI process is proceeded. Otherwise, if the level of the particle is not matched to the predetermined level, a cleaning process using a scrubber(20) is proceeded. After the cleaning process using the scrubber is performed, the level of the particle is secondly examined. In case the second examination result is matched to the predetermined level, the subsequent STI process is proceeded. Otherwise, if the examination result is not matched to the predetermined level, a cleaning process using laser annealing is proceeded. After the cleaning process using the laser annealing is performed, the level of the particle is thirdly examined. In case the level of the particle is matched to the predetermined level, the subsequent STI process is proceeded. Otherwise, if the examination result is not matched to the predetermined level, the cleaning process using the laser annealing is again proceeded.
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