| 摘要 |
<p>A multi-level copper interconnect structure of a semiconductor device, in the form of damascene, has an interlayer film between copper layers. The interlayer film is formed from either a layered structure of silicon nitride 63 and one of silicon nitride oxide or silicon carbide 64, or an amorphous carbon film containing fluorine (fig 1a: 3) and a silicon dioxide film (fig 1a: 4), laid in that order in each case, or a single layer silicon carbide film. An insulating layer 65 is then formed, and photolithography processing is used to form trenches in which further copper interconnects 66 or 67 can be formed by a damascene technique. Overexposure and therefore undesirable oxidation of copper through unwanted reflections from the underlying interconnect during photolithography are avoided because the interlayer films act as anti-reflective coatings.</p> |
