发明名称 Forming a single crystal semiconductor film on a non-crystalline surface
摘要 A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation sites is deposited on the non-crystalline surface, and the single crystal semiconductor film is formed on the non-crystalline surface from the ordered array of nucleation sites. An integrated circuit incorporating one or more single crystal semiconductor layers formed by this method also is described.
申请公布号 US6620710(B1) 申请公布日期 2003.09.16
申请号 US20000664916 申请日期 2000.09.18
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 KAMINS THEODORE I.
分类号 C30B1/00;C30B7/00;C30B13/00;C30B25/02;C30B25/18;C30B29/06;H01L21/20;H01L21/205;(IPC1-7):H01L21/20;H01L21/36;C30B21/40;C30B28/08;C30B19/00;C30B23/00;C30B25/00;C30B28/12;C30B28/14 主分类号 C30B1/00
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