发明名称 |
Forming a single crystal semiconductor film on a non-crystalline surface |
摘要 |
A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation sites is deposited on the non-crystalline surface, and the single crystal semiconductor film is formed on the non-crystalline surface from the ordered array of nucleation sites. An integrated circuit incorporating one or more single crystal semiconductor layers formed by this method also is described.
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申请公布号 |
US6620710(B1) |
申请公布日期 |
2003.09.16 |
申请号 |
US20000664916 |
申请日期 |
2000.09.18 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
KAMINS THEODORE I. |
分类号 |
C30B1/00;C30B7/00;C30B13/00;C30B25/02;C30B25/18;C30B29/06;H01L21/20;H01L21/205;(IPC1-7):H01L21/20;H01L21/36;C30B21/40;C30B28/08;C30B19/00;C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B1/00 |
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地址 |
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