发明名称 Method and test circuit for developing integrated circuit fabrication processes
摘要 During the development of process parameters for fabricating an integrated circuit, a test circuit is provided on the wafer that provides rapid identification of process problems. Open circuits are identified by sequentially connecting one end of the conductive paths to the signal source and measuring the current at the other end. Short circuits are identified by sequentially connecting first conductive paths to the signal source and measuring the current generated in the second conductive paths. The location of breaks in the first conductive paths is identified by systematically bypassing sections of the first conductive paths, thereby facilitating failure analysis.
申请公布号 US6621289(B1) 申请公布日期 2003.09.16
申请号 US20010896253 申请日期 2001.06.28
申请人 XILINX, INC. 发明人 VOOGEL MARTIN L.
分类号 H01L23/544;(IPC1-7):G01R31/26;G01R31/02;H01H31/02 主分类号 H01L23/544
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