发明名称 |
Method of fabricating low stress semiconductor devices with thermal oxide isolation |
摘要 |
A method is provided of fabricating a semiconductor device that includes forming a silicon oxide film on a semiconductor substrate. A silicon nitrite film may be formed on the silicon oxide film. A portion of the silicon nitrite film and the silicon oxide film may be removed at a desired portion. Additionally, a groove may be formed in the semiconductor substrate in the portion in which the silicon oxide film is removed. A part of the silicon oxide film may be etched back around the groove with hydrofluoric acid type at the portion in which the silicon nitrite film is located above. Additionally, an oxidized film may be formed in the groove of the semiconductor substrate and the groove may be oxidized.
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申请公布号 |
US6620704(B2) |
申请公布日期 |
2003.09.16 |
申请号 |
US20010893980 |
申请日期 |
2001.06.29 |
申请人 |
HITACHI, LTD. |
发明人 |
MIURA HIDEO;OGASAWARA MAKOTO;MASUDA HIROO;MURATA JUN;OKAMOTO NORIAKI |
分类号 |
H01L21/762;H01L27/08;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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