摘要 |
Method for forming at least a portion of a top electrode of a container capacitor and at least a portion of a contact plug in one deposition are described. In one embodiment, the top electrode is formed interior to a bottom electrode of the container capacitor. In another embodiment, the top electrode is formed interior to, and exterior and below a portion of the bottom electrode of the container capacitor. The method of forming a top electrode of a container capacitor and a contact plug with a same deposition is particularly well-suited for high-density memory array formation.
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