发明名称 NEGATIVE ION GENERATOR CIRCUIT STRUCTURE
摘要 A circuit structure of DC negative ion generator is provided to extend a lifetime of a product and improve reliability by preventing damage of a component of a negative ion generator through anti-static in generating a negative ion. A Circuit structure of DC negative ion generator includes an oscillation unit(20), a transformer(T1), a negative ion output unit(30), a negative ion generation chip(40), and a ground(50). The oscillation unit oscillates and amplifies a DC voltage supplied from a power supply unit. The transformer converts the amplified voltage through the oscillation unit according to a predetermined voltage ratio to output the converted voltage. The negative ion output unit includes a high double voltage circuit element which generates a high voltage by increasing an output voltage of a secondary side of the transformer to a double voltage and outputs the high voltage. The negative ion generation chip is connected to the negative ion output unit. The ground is connected to the negative ion output unit.
申请公布号 KR20080040888(A) 申请公布日期 2008.05.09
申请号 KR20060108828 申请日期 2006.11.06
申请人 KWON, OH SAN 发明人 LEE, DONG KYU
分类号 H01T23/00;A61L9/00 主分类号 H01T23/00
代理机构 代理人
主权项
地址