发明名称 Post-formation feature optimization
摘要 A method of optimizing a feature, defined by a wall in a wafer material, to an accuracy of better than 1 micron involves treating the wall with a reactive gas, by exposing the wall to the reactive gas, to cause the wall to become a cladding material and expand outwards from the wall in a defined, uniform manner until a desired size for the feature is achieved. An alternative method of optimizing a feature, defined by a wall in a wafer material, to an accuracy of better than 1 micron involves depositing a base material on at least part of the wall to facilitate plating of a material on the wall, on top of the base material, in a defined, uniform manner, and plating the at least part of the wall with the material until a desired size for the feature is achieved.
申请公布号 US6619855(B2) 申请公布日期 2003.09.16
申请号 US20020098255 申请日期 2002.03.14
申请人 XANOPTIX, INC. 发明人 DUDOFF GREG;KANG KEITH
分类号 G02B6/32;G02B6/36;G02B6/38;G02B6/42;(IPC1-7):G02B6/36 主分类号 G02B6/32
代理机构 代理人
主权项
地址