发明名称 |
Non-volatile memory and fabrication thereof |
摘要 |
A method for fabricating a non-volatile memory is described. A planar doped region is formed in the substrate at first. A mask layer and a patterned photoresist layer are sequentially formed on the substrate. A plurality of trenches is formed in the substrate with the patterned photoresist layer as a mask to divide the planar doped region into a plurality of bit-lines. The patterned photoresist layer is removed and then a recovering process is performed to recover the side-walls and the bottoms of the trenches from the damages caused by the trench etching step; The mask layer is removed. A dielectric layer is formed on the substrate and then a plurality of word-lines is formed on the dielectric layer.
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申请公布号 |
US6620693(B2) |
申请公布日期 |
2003.09.16 |
申请号 |
US20020055491 |
申请日期 |
2002.01.22 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LAI HAN-CHAO;LIN HUNG-SUI;LU TAO-CHENG |
分类号 |
H01L21/8246;H01L27/105;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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